TORRANCE, California, September 6, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS) announced the global launch of GaNSafe™, a new high-performance broadband power platform, from select customers and partners. and a press event in Taiwan today. Navitas has optimized its fourth generation gallium nitride technology for demanding, high power applications in the data center, solar/energy storage and energy markets, where efficiency, energy density and stable and reliable operation are important.
David Carroll, Vice President of Global Sales at Navitas, and Charles Bailey, Director of Business Development, will introduce Navitas and the new GaNSafe platform to a VIP audience of more than 50 distinguished customers at the global launch event at the Marriott Taipei. participants, as well as industry partners and international media.
The new fourth generation GaN power IC is manufactured in Hsinchu by TSMC, a long time partner of Navitas. TSMC's GaN Power technology manager, Dr. will give a special presentation about the future of GaN at the Navitas GaNSafe presentation. RY thanked Su.
Navitas GaNFast™ power IC is gallium nitride with control, sensing and protection to provide faster charging, higher power density and greater energy efficiency with over 100,000,000 units shipped and over 20 new sectors ( GaN) that combines power and motor. warranty year. Now, a new GaNSafe platform has been developed with additional protection features, application-specific functionality and a new high-strength packaging that enables long-term performance at very high temperatures.
The initial high power GaNSafe 650/800V portfolio covers the R DS(ON) range from 35 to 98mOhm in a rugged cold flow surface mount TOLL package for 1000W to 22000W applications. GaNSafe's built-in features include:
- Integrated, shielded, tunable gate driver control without gate-source connection inductance for reliable, high 2 MHz switching capability to maximize application power density.
- High-speed short-circuit protection: Self-contained "detect and protect" within 50 ns - 4x faster than competitive discrete solutions.
- 2 kV zero electrostatic discharge (ESD) protection for discrete GaN transistors.
- 650V continuous and 800V transient capability to withstand unusual application conditions.
- Easy-to-use, full-featured, high-power, high-reliability, high-efficiency power integrated circuit with only 4 pins to accelerate customer design.
- Programmable on and off levels (dV/dt) to facilitate EMI regulatory requirements.
Unlike discrete GaN transistor designs with spikes, dips, and out-of-spectrum, GaNSafe provides an efficient, predictable, and reliable system. The rugged TOLL 4-pin GaNSafe package meets the stringent IPC-9701 mechanical reliability standards and offers simple, powerful, and reliable performance compared to multi-chip modules which require 3x as many connections and have poor cooling capabilities.
Navitas' market-leading systems design center offers complete platform designs with system performance, density, and cost benchmarking using GaNSafe products to accelerate customer time to profit and increase the chances of design success. The system platform includes comprehensive design support with fully tested hardware, embedded software, schematics, BOMs, layouts, simulations and hardware test results. Examples of system platforms enabled with GaNSafe technology include:
- Measuring just 1U (40mm) x 73.5mm x 185mm (544cm) with a total power rating of 3,200W, Navitas' CRPS185 data center power platform delivers a density of 5.9W/dc, or nearly 100W/ dc.3 . This is a 40% size reduction over a silicon equivalent approach and achieves an efficiency of over 96.5% at 30% load, resulting in a 'Titanium Plus' benchmark of greater than 96% covering from 20% to 60%.
- Navitas 6.6kW Bidirectional EV On-Board Charger (OBC) with 3kW DC-DC. These units with over 96% efficiency have over 50% higher energy density and offer up to 16% energy savings compared to competitive solutions over 95% efficiency.
“Our original GaNFast and GaNSense technologies are setting standards for the mobile charging industry, creating the first market to adopt mainstream, high-volume GaN as a replacement for silicon,” said Gene Sheridan, CEO and co-founder. “GaNSafe takes our technology to the next level making it the most secure, reliable and secure GaN device in the industry and is now targeting 1-22kW power systems in data centers powered by artificial intelligence, electric vehicles, solar power and energy storage. The highest efficiency, density, and reliability require GaN in this multi-billion dollar market.
The GaNSafe portfolio is available immediately to eligible customers, with mass production expected to commence in Q4 2023. There are already 40 ongoing customer projects with GaNSafe in data center, solar power, energy storage and electric vehicles, adding to Navitas' number of customers worth $1 billion.
About Navis
Navitas Semiconductor (Nasdaq: NVTS) is the only clean next-generation power semiconductor company founded in 2014. The GaNFast™ power IC combines gallium nitride (GaN) power and actuation with control, sensing, and protection for faster performance. charging, higher energy density, and more energy efficient. Additional GeneSiC™ Electrical Devices are high-power, high-voltage, high-reliability silicon carbide (SiC) solutions. Key markets include electric vehicles, solar energy, energy storage, technology/industrial, data centers, mobile devices and consumer goods. More than 185 Navitas patents issued or pending. More than 100 million GaN and 12 million SiC devices have shipped and are backed by the industry's first and only 20-year GaNFast warranty. Navitas is the first semiconductor company in the world to receive the CarbonNeutral® certification.
Navitas Semiconductor, GaNFast, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and its subsidiaries. All other marks, product names and symbols are or may be trademarks or registered trademarks used to identify products and services of their respective owners.
Contact:
Stephen Oliver, Vice President of Corporate Marketing and Investor Relations, ir@navitassemi.com.
PR photo:
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/1baea9d5-d832-437c-88c2-5d27abd8e1fe.
